Fluctuation electron microscopy

Fluctuation electron microscopy (FEM) is a technique in electron microscopy that probes nanometer-scale or "medium-range" order in disordered materials. The first studies were performed on amorphous Ge (Treacy and Gibson 1997)[1] and later on amorphous silicon and hydrogenated amorphous silicon.[2]

References
  1. Treacy, Gibson (1997). "Diminished medium-range order observed in annealed amorphous germanium". Physical Review Letters. 78: 1074. doi:10.1103/PhysRevLett.78.1074.
  2. P. M. Voyles; J. E. Gerbi; M. M. J. Treacy; J. M. Gibson & J. R. Abelson (2001). "Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature". Physical Review Letters. 86: 5514. doi:10.1103/PhysRevLett.86.5514.


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