Triethylindium
Triethylindium is an
organometallic compound. Its chemical formula is C
6H
15In.[1][2]
 | |
| Names | |
|---|---|
| IUPAC name
Triethylindium | |
| Other names
Indium triethyl, triethylindigane, indiumtriethyl, TEI, TEIn | |
| Identifiers | |
3D model (JSmol) |
|
| ChemSpider | |
| ECHA InfoCard | 100.011.905  |
PubChem CID |
|
CompTox Dashboard (EPA) |
|
| |
| |
| Properties | |
| C6H15In | |
| Molar mass | 202.004 g·mol−1 |
| Appearance | Colorless liquid |
| Boiling point | 144 °C (291 °F; 417 K) |
| Hazards | |
| GHS pictograms |   |
| GHS Signal word | Danger |
| H250, H314 | |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). | |
| Infobox references | |
Synthesis
This compound can be obtained by reacting indium(III) chloride with a diethyl ether solution of ethyl magnesium chloride:
- InCl
3 + 3 C
2H
5MgCl → In(C2H5)3 + 3 MgCl
2
Other routes are also known.[3]
Properties
Indium triethyl is a colorless, toxic, oxidation and hydrolysis-sensitive liquid. It is a monomer in the gaseous and dissolved state. The compound reacts with halomethanes to form diethyl indium halides.[4]
Triethylindium is highly reactive with water:
- In(C2H5)3 + H
2O → In(C2H5)2OH + C
2H
6↑
Applications
Indium triethyl is used to prepare indium phosphide layers for microelectronics.[5]
See also
References
- "INDIUM TRIETHYL". chemicalbook.com. Retrieved 7 June 2017.
- "Substance Name: Indium, triethyl". chem.nlm.nih.gov. Retrieved 7 June 2017.
- Cowley, Alan H. (2009). Inorganic Syntheses. John Wiley & Sons. p. 51. ISBN 978-0-470-13297-5.
- Maeda, Takayoshi; Tada, Hisashi; Yasuda, Kiyoshi; Okawara, Rokuro (11 September 1970). "Reactions of triethylindium with halomethanes: preparations and properties of diethylindium halides". Journal of Organometallic Chemistry. 27 (1): 13–18. doi:10.1016/S0022-328X(00)82987-3.
- Sakaki, H.; Woo, J.C.; Yokoyama, N.; Harayama, Y. (1999). Compound Semiconductors: Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors held in Nara, Japan, 12-16 October 1998. CRC Press. p. 529. ISBN 978-0750306119.
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