130 nm process

The 130 nm process refers to the level of MOSFET (CMOS) semiconductor process technology that was commercialized around the 2001–2002 timeframe, by leading semiconductor companies like Fujitsu,[1] IBM, Intel, Texas Instruments, and TSMC.

The origin of the 130 nm value is historical, as it reflects a trend of 70% scaling every 2–3 years. The naming is formally determined by the International Technology Roadmap for Semiconductors (ITRS).

Some of the first CPUs manufactured with this process include Intel Tualatin family of Pentium III processors.

Background

Their first MOSFET demonstrated by Egyptian engineer Mohamed Atalla and Korean engineer Dawon Kahng in 1960 had a gate length of 20 μm and a gate oxide thickness of 100 nm.[2] In 1984, a MOSFET based on NMOS logic was fabricated with a 100 nm channel length by Toshio Kobayashi, Seiji Horiguchi and K. Kiuchi at Nippon Telegraph and Telephone (NTT) in Japan.[3]

In 1990, a 100 nm CMOS process was demonstrated by an IBM T.J. Watson Research Center team led by Iranian engineers Ghavam G. Shahidi and Bijan Davari and Taiwanese engineer Yuan Taur.[4] In 2001, 100 nm CMOS nodes were commercialized by Fujitsu[1] and IBM.

65nm CMOS Process Technology
Sze, Simon M. (2002). Semiconductor Devices: Physics and Technology (2nd ed.). Wiley. p. 4. ISBN 0-471-33372-7.
Kobayashi, Toshio; Horiguchi, Seiji; Kiuchi, K. (December 1984). "Deep-submicron MOSFET characteristics with 5 nm gate oxide". 1984 International Electron Devices Meeting: 414–417. doi:10.1109/IEDM.1984.190738. S2CID 46729489.
Shahidi, Ghavam G.; Davari, Bijan; Taur, Yuan; Warnock, James D.; Wordeman, Matthew R.; McFarland, P. A.; Mader, S. R.; Rodriguez, M. D. (December 1990). "Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing". International Technical Digest on Electron Devices: 587–590. doi:10.1109/IEDM.1990.237130. S2CID 114249312.
Krewell, Kevin (21 October 2002). "Fujitsu's SPARC64 V Is Real Deal". Microprocessor Report.
Микропроцессор Эльбрус/МЦСТ. Mcst.ru (in Russian). Retrieved 2015-09-10.
"Микропроцессор МЦСТ R500S/МЦСТ". Mcst.ru (in Russian). Archived from the original on 2015-11-01. Retrieved 2015-09-10.
"CPU from DM&P". Dmp.com.tw. Retrieved 2015-09-10.

Preceded by 180 nm	MOSFET manufacturing processes	Succeeded by 90 nm

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Semiconductor device fabrication

MOSFET scaling (process nodes)
010 µm – 1971 006 µm – 1974 003 µm – 1977 1.5 µm – 1981 001 µm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020
Future 003 nm – ~2022 002 nm – >2023
Areal density (computer storage) Half-nodes Density CMOS Device (multi-gate) Moore's law Kryder's law Semiconductor Industry Superconductor Nanoelectronics