6 µm process

The 6 μm process is the level of MOSFET semiconductor process technology that was reached around 1974,[1][2] by leading semiconductor companies such as Toshiba and Intel.

Products featuring 6 μm manufacturing process

Toshiba TLCS-12, a microprocessor developed for the Ford EEC (Electronic Engine Control) system in 1973. It was manufactured on a 6 μm process, and went into mass production in 1975.[3]
Intel 8080 CPU launched in 1974 was manufactured using this process.[4]
Zilog Z80 launched 1976 was manufactured in 5 μm and 4 μm.[5]
The Television Interface Adaptor, the custom graphics and audio chip developed for the Atari 2600 in 1977. It was designed for a 6 μm process.[6]
The optical mouse demonstrated by Richard F. Lyon of Xerox in 1981 had a 5 μm NMOS chip.[7][8]
MOS Technology SID, a programmable sound generator developed for the Commodore 64 in 1982. It was designed for a 7 μm and 6 μm process.[6]
MOS Technology VIC-II, a video display controller developed for the Commodore 64 in 1982. It was designed for a 5 μm process.[6]

Mueller, S (2006-07-21). "Microprocessors from 1971 to the Present". informIT. Retrieved 2012-05-11.
Myslewski, R (2011-11-15). "Happy 40th birthday, Intel 4004!". TheRegister.
"1973: 12-bit engine-control microprocessor (Toshiba)" (PDF). Semiconductor History Museum of Japan. Archived from the original (PDF) on 27 June 2019. Retrieved 27 June 2019.
http://www.listoid.com/list/142
See Transistor count and Zilog Z80.
"Design case history: the Commodore 64" (PDF). IEEE Spectrum. Retrieved 1 September 2019.
Lyon, Richard F. (August 1981). "The Optical Mouse, and an Architectural Methodology for Smart Digital Sensors" (PDF). In H. T. Kung; Robert F. Sproull; Guy L. Steele (eds.). VLSI Systems and Computations. Computer Science Press. pp. 1–19. doi:10.1007/978-3-642-68402-9_1. ISBN 978-3-642-68404-3.
Lyon, Richard F. (2014). "The Optical Mouse: Early Biomimetic Embedded Vision". Advances in Embedded Computer Vision. Springer. pp. 3–22 (3). ISBN 9783319093871.

Preceded by 10 μm process	MOSFET semiconductor device fabrication process	Succeeded by 3 μm process

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Semiconductor device fabrication

MOSFET scaling (process nodes)
010 µm – 1971 006 µm – 1974 003 µm – 1977 1.5 µm – 1981 001 µm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020
Future 003 nm – ~2022 002 nm – >2023
Half-nodes Density CMOS Device (multi-gate) Moore's law Semiconductor Industry Nanoelectronics