Gallium(II) sulfide

Gallium(II) sulfide
Names
	Other names Gallium sulfide
Identifiers
CAS Number	12024-10-1 ;
3D model (JSmol)	Interactive image;
ChemSpider	4898760 ;
ECHA InfoCard	100.031.522
PubChem CID	6370242;
	InChI InChI=1S/Ga.S Key: HLVRMBHKGAMNOI-UHFFFAOYSA-N ;
	SMILES S=[Ga];
Properties
Chemical formula	GaS•
Molar mass	101.788 g mol−1
Appearance	Yellow crystals
Density	3.86 g cm−3
Melting point	965 °C (1,769 °F; 1,238 K)
Magnetic susceptibility (χ)	−-23.0·10−6 cm3/mol
Structure
Crystal structure	hexagonal, hP8
Space group	P63/mmc, No. 194
Related compounds
Related compounds	Gallium(III) sulfide
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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	Infobox references

Gallium(II) sulfide, GaS, is a chemical compound of gallium and sulfur. The normal form of gallium(II) sulfide as made from the elements has a hexagonal layer structure containing Ga₂⁴⁺ units which have a Ga-Ga distance of 248pm.[1] This layer structure is similar to GaTe, GaSe and InSe.[1] An unusual metastable form, with a distorted wurtzite structure has been reported as being produced using MOCVD. The metal organic precursors were di-tert-butyl gallium dithiocarbamates, for example Ga^tBu₂(S₂CNMe₂) and this was deposited onto GaAs. The structure of the GaS produced in this way is presumably Ga²⁺ S²⁻.[2]

Single layers of gallium sulfide are dynamically stable two-dimensional semiconductors, in which the valence band has an inverted Mexican-hat shape, leading to a Lifshitz transition as the hole-doping is increased.[3]

References

WebElements

Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann. ISBN 978-0-08-037941-8.
MOCVD Growth of Gallium Sulfide Using Di-tert-butyl Gallium Dithiocarbamate Precursors: Formation of a Metastable Phase of GaS A. Keys, S G. Bott, A. R. Barron Chem. Mater., 11 (12), 3578 -3587, 1999. doi:10.1021/cm9903632
V. Zolyomi, N. D. Drummond and V. I. Fal'ko (2013). "Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides". Phys. Rev. B. 87: 195403. arXiv:1302.6067. Bibcode:2013PhRvB..87s5403Z. doi:10.1103/PhysRevB.87.195403.

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[Greenwood-1] Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann. ISBN 978-0-08-037941-8.

[2] MOCVD Growth of Gallium Sulfide Using Di-tert-butyl Gallium Dithiocarbamate Precursors: Formation of a Metastable Phase of GaS A. Keys, S G. Bott, A. R. Barron Chem. Mater., 11 (12), 3578 -3587, 1999. doi:10.1021/cm9903632

[3] V. Zolyomi, N. D. Drummond and V. I. Fal'ko (2013). "Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides". Phys. Rev. B. 87: 195403. arXiv:1302.6067. Bibcode:2013PhRvB..87s5403Z. doi:10.1103/PhysRevB.87.195403.